Dynamic prediction of point defects in Czochralski silicon growth. An attempt to reconcile experimental defect diffusion coefficients with the V / G criterion

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 2-3, 2008, Pages 320-324

  Van Goethem, N ^a   de Potter, A ^b   Van den Bogaert, N ^a,b   Dupret, F ^a,b  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b FEMAG Soft SA Company   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SOFTWARE; CRYSTAL GROWTH FROM MELT; DIFFUSION; MATHEMATICAL MODELS;

DEFECT DIFFUSION; FEMAG SOFTWARE; THERMAL DRIFT;

POINT DEFECTS;

EID: 38749117532     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.07.129     Document Type: Article

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