Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 2 A, 2000, Pages 368-371

  Ono, Naoki ^a   Kitamura, Kounosuke ^a   Nakajima, Ken ^a   Shimanuki, Yasushi ^a  

^a MITSUBISHI MATERIALS CORPORATION   (Japan)

Author keywords

Boron concentration; Flexural vibration method; Silicon single crystal; Young's modulus

Indexed keywords

BORON; COMPOSITION EFFECTS; ELASTIC MODULI; HIGH TEMPERATURE EFFECTS; LATTICE VIBRATIONS; NATURAL FREQUENCIES; SINGLE CRYSTALS;

FLEXURAL VIBRATION METHOD;

SEMICONDUCTING SILICON;

EID: 0033884366     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.368     Document Type: Article

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