Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results

Journal of Crystal Growth

Volumn 180, Issue 3-4, 1997, Pages 461-467

  Dornberger, E ^a   Tomzig, E ^a   Seidl, A ^b   Schmitt, S ^b   Leister, H J ^b   Schmitt, Ch ^b   Muller G ^b  

^a SILTRONIC AG   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Crystal growth; Silicon; Simulation

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; CRYSTAL GROWTH FROM MELT; HEAT TRANSFER; INDUSTRIAL FURNACES; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT; THERMAL INSULATION; THERMOCOUPLES;

CZOCHRALSKI SILICON PULLER;

SEMICONDUCTING SILICON;

EID: 0031244641     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00241-8     Document Type: Article

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