Vacancy concentrations in silicon determined by the indiffusion of iridium

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Lerner, L ^a   Stolwijk, N A ^a  

^a UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTAL GROWTH; DIFFUSION; FUNCTIONS; ION EXCHANGE; IRIDIUM; NEUTRON ACTIVATION ANALYSIS; SILICON WAFERS; SINGLE CRYSTALS; THERMODYNAMICS;

MECHANICAL SECTIONING; NEUTRON FLUXES; SI-BASED CHIP TECHNOLOGY; VACANCY CONCENTRATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 13544273294     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1844031     Document Type: Article

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