Point defects in silicon melt growth from the experimental results

ECS Transactions

Volumn 33, Issue 11, 2010, Pages 75-100

  Abe, Takao ^a   Takahashi, Toru ^a  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; POINT DEFECTS; PRECIPITATION (CHEMICAL); SILICON; THERMAL GRADIENTS; THERMOCOUPLES;

CRYSTAL SURFACES; DECREASING FUNCTIONS; DISLOCATION LOOP; GROWTH INTERFACE SHAPE; GROWTH INTERFACES; INTERSTITIALS; OXYGEN PRECIPITATION; SILICON MELTS;

GROWTH RATE;

EID: 84863147420     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3485684     Document Type: Conference Paper

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