Ab initio analysis of point defects in plane-stressed Si or Ge crystals

ECS Transactions

Volumn 11, Issue 3, 2007, Pages 375-391

  Sueoka, K ^a   Spiewak P ^b   Vanhellemont, J ^c  

^a OKAYAMA PREFECTURAL UNIVERSITY   (Japan)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTALS; ELASTIC MODULI; ENERGY GAP; POINT DEFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICES; SILICON;

AB INITIO ANALYSIS; AB INITIO APPROACH; COMPRESSIVE STRAIN; DEVICE APPLICATION; FORMATION ENERGIES; SELF INTERSTITIALS; STABILITY REGIONS; TETRAHEDRAL SITES;

STRAIN;

EID: 43049110836     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2778678     Document Type: Conference Paper

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