Generation and annihilation of point defects by doping impurities during FZ silicon crystal growth

Journal of Crystal Growth

Volumn 334, Issue 1, 2011, Pages 4-15

  Abe, Takao ^a  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

A1. Covalent bonding radius; A1. Diffusion coefficient; A1. Doping impurities; A1. Nitrogen molecule; A1. Point defects; A2. Growth from melt

Indexed keywords

A1. DOPING IMPURITIES; A1. NITROGEN MOLECULE; A2. GROWTH FROM MELT; COVALENT BONDING; DIFFUSION COEFFICIENTS;

CRYSTAL GROWTH; DIFFUSION; MOLECULES; NITROGEN; POINT DEFECTS; SEMICONDUCTOR DOPING; VACANCIES;

CRYSTAL IMPURITIES;

EID: 80053304474     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.04.017     Document Type: Article

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