Modeling of defects generation in 300mm silicon monocrystals during czochralski growth

Japanese Journal of Applied Physics

Volumn 49, Issue 12, 2010, Pages

  Lee, Sang Hun ^a,b   Song, Do Won ^a,c   Oh, Hyun Jung ^a   Kim, Do Hyun ^b  

^a LG Siltron Inc   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c University of Seoul   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

300MM SILICON; AXIAL TEMPERATURE GRADIENTS; CZOCHRALSKI GROWTH; DEFECT ANALYSIS; DEFECT CONCENTRATIONS; DEFECT DISTRIBUTION; DEFECT GENERATION; DEFECT INCORPORATION; DEFECT MODEL; DEFECTS GENERATION; G-VALUES; HIGH QUALITY; INITIAL POINT; MICRO VOIDS; PROCESS PARAMETERS; PULLING RATES; SILICON CRYSTAL;

EXPERIMENTS; OPTIMIZATION; POINT DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SUPERCONDUCTING MATERIALS; THERMAL GRADIENTS;

DEFECTS;

EID: 79551654875     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.121303     Document Type: Article

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