Concentration of point defects changed by thermal stress in growing CZ silicon crystal: Effect of the growth rate

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 45-48

  Tanahashi, K ^a   Kikuchi, M ^a   Higashino, T ^a   Inoue, N ^a   Mizokawa, Y ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; POINT DEFECTS; SEMICONDUCTOR GROWTH; THERMAL STRESS;

POINT DEFECT CONCENTRATION;

SILICON WAFERS;

EID: 0033881875     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00644-2     Document Type: Article

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