Computer simulation of point-defect fields and microdefect patterns in Czochralski-grown Si crystals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 A, 2002, Pages 464-471

  Puzanov, Nikolai I ^a   Eidenzon, Anna M ^a   Puzanov, Dmitri N ^a   Furukawa, Jun ^a,b   Harada, Kazuhiro ^a,b   Ono, Naoki ^a,b   Shimanuki, Yasushi ^a,b  

^a Podolsk Chemical Metallurgical Plant   (Russian Federation)

^b SUMCO CORPORATION   (Japan)

Author keywords

Computer simulation; Czochralski silicon; Microdefect; R OSF band; Self interstitial; Temperature field; Transient process; Vacancy

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; CRYSTALLIZATION; DIFFUSION; HEAT TRANSFER; MATHEMATICAL MODELS; POINT DEFECTS; SILICON;

SILICON CRYSTALS;

CRYSTALS;

EID: 0036478403     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.464     Document Type: Article

References (19)