Concentration of point defects in growing CZ silicon crystal under the internal stresses: Effects of impurity doping and thermal stress

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 493-496

  Tanahashi, K ^a   Kikuchi, M ^a   Higashino, T ^a   Inoue, N ^a   Mizokawa, Y ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; POINT DEFECTS; RESIDUAL STRESSES; SEMICONDUCTOR DOPING; THERMAL STRESS;

SECONDARY DEFECTS;

SEMICONDUCTING SILICON;

EID: 0033324003     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00534-7     Document Type: Article

References (11)

1. T. Abe, Silicon, Baifukan, Tokyo, 1994, p. 263 (in Japanese).
2. E. Dornberger et al., J. Crystal Growth 180 (1997) 343.
3. M. Suhren et al., J. Electrochem. Soc. 144 (1997) 4041.
4. M. Kikuchi et al., Defects in Silicon III, The Electrochemical Society, 1999, p. 491.
5. K. Tanahashi, N. Inoue, J. Mater. Sci. 10 (1999) 1.
6. N.S. Rytova, Sov. Phys. Semicond. 20 (1986) 869.
7. F. Ishikawa et al., The Japan Society of Applied Physics and Related Societies, Autumn, 1997, Extended Abstracts, Vol. 1, p. 423 (in Japanese).
8. W. Walukiewicz, Appl. Phys. Lett. 54 (1989) 2009.
9. T. Ono et al., Defects in Silicon III, The Electrochemical Society, 1999, p. 300.
10. T. Abe, Defects in Silicon III, The Electrochemical Society, 1999, p. 414.
11. W. Wijaranakula, J. Electrochem. Soc. 140 (1993) 3306.