Non-equilibrium thermodynamic analysis on the behaviour of point defects in growing silicon crystals: Effects of stress

Journal of Materials Science: Materials in Electronics

Volumn 10, Issue 5, 1999, Pages 359-363

  Tanahashi, K ^a   Inoue, N ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; FREE ENERGY; POINT DEFECTS; SEMICONDUCTOR GROWTH; STRESS CONCENTRATION; THERMAL DIFFUSION IN SOLIDS;

EQUILIBRIUM CONCENTRATION;

SEMICONDUCTING SILICON;

EID: 0032640010     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1008945406768     Document Type: Article

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