On the extended point defect model in Si crystals at high temperature

Japanese Journal of Applied Physics

Volumn 47, Issue 9 PART 1, 2008, Pages 7117-7118

  Suezawa, Masashi ^a   Yonenaga, Ichiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Interstitial; Silicon; Thermal equilibrium; Vacancy

Indexed keywords

CRYSTAL DEFECTS; CRYSTALLOGRAPHY; CRYSTALS; POINT DEFECTS; POWDERS; SILICON; THERMODYNAMICS;

DIFFUSION CONSTANTS; EXTENDED MODELS; HIGH TEMPERATURES; INTERSTITIAL; POINT DEFECT MODELS; SI CRYSTALS; THERMAL EQUILIBRIUM; VACANCY FORMATION ENERGIES;

VACANCIES;

EID: 55149087902     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7117     Document Type: Article

References (15)

1. A. Seeger and K. P. Chik: Phys. Status Solidi B 29 (1968) 455.
2. H. Bracht, J. Page Pedersen, N. Zangenberg, A. Nylandsted Larsen, E. E. Haller, G. Lulli, and M. Posselt: Phys. Rev. Lett. 91 (2003) 245502.
3. U. Goesele, W. Frank, and A. Seeger: Solid State Commun. 45 (1983) 31.
4. G. D. Watkins: Proc. Int. Conf. Crystalline Lattice Defects, J. Phys. Soc. Jpn. 18 (1963) Suppl. II, p. 22.
5. J. R. Troxell and A. P. Chatterjee: Inst. Phys. Conf. Ser. 56 (1979) 16.
6. G. D. Watkins: Inst. Phys. Conf. Ser. 23 (1974) 1.
7. M. Suezawa, K. Saito, K. Kojima, and A. Kasuya: Jpn. J. Appl. Phys. 44 (2005) L593.
8. M. Suezawa: Phys. Rev. B 63 (2001) 035203.
9. Semiconductors, ed. O. Madelung (Springer, Berlin, 1991) Springer Series in Data in Science and Technology, p. 23.
10. N. Fukata, T. Ohori, M. Suezawa, and H. Takahashi: J. Appl. Phys. 91 (2002) 5831.
11. G. D. Watkins and J. W. Corbett: Phys. Rev. 138 (1965) A543.
12. N. Fukata, A. Kasuya, and M. Suezawa: Jpn. J. Appl. Phys. 40 (2001) L854.
13. As a review, M. M. De Souza, and E. M. S. Narayanan: Defect Diffus. Forum 153-155 (1998) 69.
14. D. A. Antoniadis and I. Moskowitz: J. Appl. Phys. 53 (1982) 6788.
15. K. Nakamura: private communication.