Global simulation of the CZ silicon crystal growth up to 400mm in diameter

Journal of Crystal Growth

Volumn 229, Issue 1, 2001, Pages 26-30

  Takano, K ^a   Shiraishi, Y ^a   Matsubara, J ^a   Iida, T ^a   Takase, N ^a   Machida, N ^a   Kuramoto, M ^a   Yamagishi, H ^a  

^a Super Silicon Crystal Research Institute Corporation   (Japan)

Author keywords

A1. Computer simulation; A1. Heat transfer; A2. Czochralski method; A2. Industrial crystallization; A2. Single crystal growth; B2. Semiconducting silicon

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; CRYSTALLIZATION; HEAT TRANSFER; INTERFACES (MATERIALS); SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; TEMPERATURE DISTRIBUTION; THERMAL STRESS; THERMOELASTICITY;

HOT ZONE (HZ) REGIONS;

SEMICONDUCTING SILICON;

EID: 0035398269     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01044-2     Document Type: Article

References (6)

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