Gigantic uphill drift of vacancies and self-interstitials in silicon

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 138-141

  Voronkov, V V ^a   Falster, R ^b  

^a MEMC Electronic Materials   (Italy)

^b MEMC Electronic Materials   (Italy)

Author keywords

Diffusion; Drift; Self interstitial; Silicon; Vacancy

Indexed keywords

POINT DEFECTS; VACANCIES;

DRIFT; DRIFT COEFFICIENT; INTERSTITIALS; INTRINSIC POINT DEFECTS; MICRO-DEFECTS; POINT DEFECT TRANSPORT; SELF INTERSTITIALS; SILICON CRYSTAL GROWTH;

SILICON;

EID: 67349117041     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.10.051     Document Type: Article

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