Upper yield point of large diameter silicon

Microelectronic Engineering

Volumn 56, Issue 1-2, 2001, Pages 117-122

  Fischer, A ^a   Richter, H ^a   Shalynin, A ^b   Krottenthaler, P ^c   Obermeier, G ^c   Lambert, U ^c   Wahlich, R ^c  

^a IHP   (Germany)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^c SILTRONIC AG   (Germany)

Author keywords

Large wafer diameter; Multiple slip; Oxygen; Silicon; Upper yield stress

Indexed keywords

AGGLOMERATION; CRYSTALLOGRAPHY; HEAT TREATMENT; OPTIMIZATION; PLASTIC FLOW; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SHEAR STRESS; SINGLE CRYSTALS; STRAIN RATE; STRESS ANALYSIS;

LARGE WAFER DIAMETERS; MULTIPLE SLIP THEORY; UPPER YIELD STRESS;

SILICON WAFERS;

EID: 0035341993     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00512-8     Document Type: Article

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