Dielectric dipole mitigated Schottky barrier height tuning using atomic layer deposited aluminum oxide for contact resistance reduction

Applied Physics Letters

Volumn 99, Issue 10, 2011, Pages

  Coss, Brian E ^a   Loh, Wei Yip ^b   Carlo Floresca, Herman ^a   Kim, Moon J ^a   Majhi, Prashant ^b   Wallace, Robert M ^a   Kim, Jiyoung ^a   Jammy, Raj ^b  

^a The University of Texas at Dallas   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; ATOMIC LAYER DEPOSITED; BARRIER HEIGHTS; LOW-RESISTANCE CONTACTS; P-TYPE SILICON; RESISTANCE REDUCTION; SCHOTTKY BARRIER HEIGHTS; TANTALUM NITRIDES; THIN LAYERS;

NITRIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICON COMPOUNDS; SILICON OXIDES; TANTALUM; TANTALUM OXIDES;

ALUMINUM COATINGS;

EID: 80052797992     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3633117     Document Type: Article

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