Impact of metal gate deposition method on characteristics of gate-first MOSFET with Hf-silicate

Electrochemical and Solid-State Letters

Volumn 8, Issue 10, 2005, Pages

  Song, S C ^a   Lee, B H ^a   Zhang, Z ^a   Choi, K ^a   Bae, S H ^a   Zeitzoff, P ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); SILICATES;

ATOMIC LAYER DEPOSITION (ALD); DOPANT DIFFUSION; METAL GATE DEPOSITION; TRAP GENERATION;

MOSFET DEVICES;

EID: 25644451338     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2007407     Document Type: Article

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