Comprehensive study of VFB shift in high-k CMOS - Dipole formation, fermi-level pinning and oxygen vacancy effect

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 341-344

  Kamimuta, Y ^a   Iwamoto, K ^a   Nunoshige, Y ^a,b   Hirano, A ^a   Mizubayashi, W ^a   Watanabe, Y ^a   Migita, S ^a   Ogawa, A ^a   Ota, H ^a   Nabatame, T ^a   Toriumi, A ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE WORK FUNCTION;

ELECTRON DEVICES;

EID: 48649098232     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418941     Document Type: Conference Paper

References (7)

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4. J. K. Schaeffer et al. Appl. Phys. Lett. 85 1826 (2004).
5. E. Cartier et al. VLSI Symp. Tech. Dig., p.230 (2005).
6. T. Nabatame et al. IEDM Tech. Dig., p.83 (2004).
7. Y. Hagimoto et al. Appl. Phys. Lett. 74 2011 (2004).