Specific contact resistivity of tunnel barrier contacts used for fermi level depinning

IEEE Electron Device Letters

Volumn 31, Issue 10, 2010, Pages 1077-1079

  Roy, Arunanshu M ^a   Lin, J Y Jason ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

Fermi depinning; Schottky barrier; specific contact resistivity; tunneling barrier

Indexed keywords

DEPINNING; FERMI LEVEL PINNING; FERMI PINNING; N-TYPE GE; SCHOTTKY BARRIERS; SPECIFIC CONTACT RESISTIVITY; TUNNEL BARRIER; TUNNELING BARRIER; TUNNELING RESISTANCE;

CONTACTS (FLUID MECHANICS); FERMI LEVEL; GERMANIUM; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES;

DIELECTRIC MATERIALS;

EID: 77957552123     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2058838     Document Type: Article

References (10)

1. T. Nishimura, K. Kita, and A. Toriumi. (2007, Sep.). Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface. Appl. Phys. Lett. Online. 91(12), p. 123 123-1. Available: http://link.aip.org/link/?APL/91/123123/1
2. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou. (2006, Dec.). Fermi-level pinning and charge neutrality level in germanium. Appl. Phys. Lett. Online. 89(25), p. 252 110. Available: http://link.aip.org/link/?APL/89/ 252110/1
3. M. Kobayashi, A. Kinoshita, K. Saraswat, H.-S. P. Wong, and Y. Nishi. (2009, Jan.). Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application. J. Appl. Phys. Online. 105(2), p. 023 702. Available: http://link.aip.org/link/? JAP/105/023702/1
4. D. Connelly, C. Faulkner, P. A. Clifton, and D. E. Grupp. (2006, Jan.). Fermi-level depinning for low-barrier Schottky source/drain transistors. Appl. Phys. Lett. Online. 88(1), p. 012 105. Available: http://link.aip.org/link/?APL/ 88/012105/1
5. R. Tsu and L. Esaki. (1973, Jun.). Tunneling in a finite superlattice. Appl. Phys. Lett. Online. 22(11), pp. 562-564. Available: http://link.aip.org/ link/?APL/22/562/1
6. Y.-C. Yeo, T.-J. King, and C. Hu. (2002, Dec.). Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide- semiconductor technology. J. Appl. Phys. Online. 92(12), pp. 7266-7271. Available: http://link.aip.org/link/?JAP/92/ 7266/1
7. R. T. Tung. (2001, Nov.). Recent advances in Schottky barrier concepts. Mater. Sci. Eng. R: Reports Online. 35(1-3), pp. 1-138. Available: http://www.sciencedirect.com/science/article/B6TXH-43VKKX9-1/2/ 2a5132850139b8457cd1d5bed1c89bec
8. J. Robertson and B. Falabretti. (2006, Dec.). Band offsets of high k gate oxides on high mobility semiconductors. Mater. Sci. Eng.: B Online. 135(3), pp. 267-271, e-MRS IUMRS ICEM 2006, Symposium B; From strained silicon to nanotubes-Novel channels for field effect devices. Available: http://www.sciencedirect.com/science/article/B6TXF-4KV8TG7-1/2/ 3598665a36a26162c355298c758e6417 (Pubitemid 44708652)
9. 2 layers using a divalent Ge precursor. Appl. Phys. Lett. Online. 90(16), p. 162 115. Available: http://link.aip.org/link/?APL/90/162115/1
10. J. Robertson. (2006, Feb.). High dielectric constant gate oxides for metal oxide Si transistors. Rep. Progr. Phys. Online. 69(2), pp. 327-396. Available: http://stacks.iop.org/0034-4885/69/i=2/a=R02