Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts

Journal of Applied Physics

Volumn 107, Issue 6, 2010, Pages

  Hu, Jenny ^a   Saraswat, Krishna C ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONDUCTION BAND EDGE; CONTACT STRUCTURE; DIODE CURRENTS; DIRECT MEASUREMENT; GAAS; LOW RESISTANCE; METAL-INDUCED GAP STATE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; UNDERLYING MECHANISM;

ELECTRON MOBILITY; ERBIUM; HIGH ELECTRON MOBILITY TRANSISTORS; METALS; MOSFET DEVICES; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR METAL BOUNDARIES;

FIELD EFFECT TRANSISTORS;

EID: 77950576097     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3327434     Document Type: Conference Paper

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