Silicon wafer cleaning processes and ozone oxide growth as studied by angle-resolved x-ray photoelectron spectroscopy (ARXPS) and ellipsometry

Surface and Interface Analysis

Volumn 33, Issue 5, 2002, Pages 433-436

  Ermolieff, A ^a   Marthon, S ^a   Rochet, X ^a   Rouchon, D ^a   Renault, O ^b   Michallet, A ^b   Tardif, F ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

ARXPS; Ellipsometry; Oxide growth; Ozone treatment; Silicon

Indexed keywords

DIELECTRIC MATERIALS; ELLIPSOMETRY; OXYGEN; OZONE; SEMICONDUCTOR GROWTH; SILICA; STOICHIOMETRY; SURFACE CLEANING; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL GROWTH; OVERLAYER THICKNESSES;

SILICON WAFERS;

EID: 0036567199     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1230     Document Type: Article

References (6)