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Surface and Interface Analysis

Volumn 43, Issue 9, 2011, Pages 1251-1256

Electrical, structural and morphological characteristics of rapidly annealed Ni/Pd Schottky rectifiers on n-type GaN

(4) Reddy, M Siva Pratap a Reddy, V Rajagopal a Jyothi, I a Choi, Chel Jong b

a SRI VENKATESWARA UNIVERSITY (India)

b Chonbuk National University (South Korea)

Author keywords

AFM; electrical and structural properties; n type GaN; Schottky rectifiers; SIMS; XRD

Indexed keywords

AFM; ELECTRICAL AND STRUCTURAL PROPERTIES; N-TYPE GAN; SCHOTTKY RECTIFIERS; XRD;

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLIZING; PHASE INTERFACES; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ELECTRIC RECTIFIERS;

EID: 80051655850 PISSN: 01422421 EISSN: 10969918 Source Type: Journal
DOI: 10.1002/sia.3706 Document Type: Article

Times cited : (5)

References (37)

1
- 0035933013
- S. J. Pearton, F. Ren, A. P. Zhang, G. Dang, X. A. Cao, K. P. Lee, H. Cho, B. P. Gila, J. W. Johnson, C. Monier, C. R. Abernathy, J. Han, A. G. Baca, J-I. Chyi, C-M. Lee, T. E. Nee, C-C. Chuo, S. N. G. Chu, Mater. Sci. Eng. B 2001, 82, 227.
- (2001) Mater. Sci. Eng. B , vol.82 , pp. 227
- Pearton, S.J.¹ Ren, F.² Zhang, A.P.³ Dang, G.⁴ Cao, X.A.⁵ Lee, K.P.⁶ Cho, H.⁷ Gila, B.P.⁸ Johnson, J.W.⁹ Monier, C.¹⁰ Abernathy, C.R.¹¹ Han, J.¹² Baca, A.G.¹³ Chyi, J.-I.¹⁴ Lee, C.-M.¹⁵ Nee, T.E.¹⁶ Chuo, C.-C.¹⁷ Chu, S.N.G.¹⁸

2
- 0042593178
- L. C. Chen, C. Y. Hsu, W. H. Lan, S. Y. Teng, Solid State Electron. 2003, 47, 1843.
- (2003) Solid State Electron , vol.47 , pp. 1843
- Chen, L.C.¹ Hsu, C.Y.² Lan, W.H.³ Teng, S.Y.⁴

3
- 0033716394
- R. Werner, M. Reinhardt, M. Emmerling, A. Forchel, V. Harle, A. Bazhenov, Phys. E 2000, 7, 915.
- (2000) Phys. e , vol.7 , pp. 915
- Werner, R.¹ Reinhardt, M.² Emmerling, M.³ Forchel, A.⁴ Harle, V.⁵ Bazhenov, A.⁶

4
- 36449006910
- M. Asif Khan, M. S. Shur, J. N. Kuznia, Q. Chen, J. Bourn, W. Schaff, Appl. Phys. Lett. 1995, 66, 1083.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1083
- Asif Khan, M.¹ Shur, M.S.² Kuznia, J.N.³ Chen, Q.⁴ Bourn, J.⁵ Schaff, W.⁶

5
- 58149231283
- P. T. Blanchard, K. A. Bertness, T. E. Harvery, L. M. Mansfield, A. W. Sanders, N. A. Sanford, IEEE Trans. Nanotechnol. 2008, 7, 760.
- (2008) IEEE Trans. Nanotechnol. , vol.7 , pp. 760
- Blanchard, P.T.¹ Bertness, K.A.² Harvery, T.E.³ Mansfield, L.M.⁴ Sanders, A.W.⁵ Sanford, N.A.⁶

6
- 0842277372
- M. Asif Khan, A. Bhattaraj, J. N. Kkuznia, D. T. Olson, Appl. Phys. Lett. 1993, 63, 1214.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 1214
- Asif Khan, M.¹ Bhattaraj, A.² Kkuznia, J.N.³ Olson, D.T.⁴

7
- 0001181554
- J. D. Guo, F. M. Pan, M. S. Feng, R. J. Guo, P. F. Chou, C. Y. Chang, J. Appl. Phys. 1996, 80, 1623.
- (1996) J. Appl. Phys. , vol.80 , pp. 1623
- Guo, J.D.¹ Pan, F.M.² Feng, M.S.³ Guo, R.J.⁴ Chou, P.F.⁵ Chang, C.Y.⁶

8
- 80051648419
- Milano
- C. S. Lee, E. Y. Chang, D. Biswas, Li Chang, J. S. Huang, Gallium Arsenide Applications Symposium, Milano, 2002.
- (2002) Gallium Arsenide Applications Symposium
- Lee, C.S.¹ Chang, E.Y.² Biswas, D.³ Chang, L.⁴ Huang, J.S.⁵

9
- 33645519793
- R. Khanna, S. J. Pearton, F. Ren, I. Kravchenko, C. J. Koa, G. C. Chi, Appl. Phys. Lett. 2005, 87, 052110.
- (2005) Appl. Phys. Lett. , vol.87 , pp. 052110
- Khanna, R.¹ Pearton, S.J.² Ren, F.³ Kravchenko, I.⁴ Koa, C.J.⁵ Chi, G.C.⁶

10
- 33646514494
- T. N. Order, P. Martin, J. Y. Lin, H. X. Jiang, J. R. Williams, T. Issacs-Smith, Appl. Phys. Lett. 2006, 88, 183505.
- (2006) Appl. Phys. Lett. , vol.88 , pp. 183505
- Order, T.N.¹ Martin, P.² Lin, J.Y.³ Jiang, H.X.⁴ Williams, J.R.⁵ Issacs-Smith, T.⁶

11
- 33846798026
- V. Rajagopal Reddy, P. Koteswara Rao, C. K. Ramesh, Mater. Sci. Eng. B 2007, 137, 200.
- (2007) Mater. Sci. Eng. B , vol.137 , pp. 200
- Rajagopal Reddy, V.¹ Koteswara Rao, P.² Ramesh, C.K.³

12
- 33846195078
- C. L. Yu, C. H. Chen, S. J. Chang, P. C. Chang, J. Elect. Chem. Soc. 2007, 154, J71.
- (2007) J. Elect. Chem. Soc. , vol.154
- Yu, C.L.¹ Chen, C.H.² Chang, S.J.³ Chang, P.C.⁴

13
- 41249092071
- L. Dobos, B. Pecz, L. Toth, Zs. J. Horvath, Z. E. Horvath, B. Beaumont, Z. Bougrioua, Vacuum 2008, 82, 794.
- (2008) Vacuum , vol.82 , pp. 794
- Dobos, L.¹ Pecz, B.² Toth, L.³ Horvath, Zs.J.⁴ Horvath, Z.E.⁵ Beaumont, B.⁶ Bougrioua, Z.⁷

14
- 77951235531
- F. Tian, E. F. Chor, Phys. Status Solidi C 2008, 5, 1953.
- (2008) Phys. Status Solidi C , vol.5 , pp. 1953
- Tian, F.¹ Chor, E.F.²

15
- 48749102901
- F. K. Yam, Z. Hassan, Physica B 2008, 403, 3105.
- (2008) Physica B , vol.403 , pp. 3105
- Yam, F.K.¹ Hassan, Z.²

16
- 51849156820
- V. Rajagopal Reddy, M. Ravinandan, P. Koteswara Rao, Semicond. Sci. Technol. 2008, 23, 095026.
- (2008) Semicond. Sci. Technol. , vol.23 , pp. 095026
- Rajagopal Reddy, V.¹ Ravinandan, M.² Koteswara Rao, P.³

17
- 69249240320
- V. Rajagopal Reddy, M. Ravinandan, P. Koteswara Rao, C-J. Choi, J. Mater. Sci. Mater. Electron. 2009, 20, 1018.
- (2009) J. Mater. Sci. Mater. Electron. , vol.20 , pp. 1018
- Rajagopal Reddy, V.¹ Ravinandan, M.² Koteswara Rao, P.³ Choi, C.-J.⁴

18
- 67650766734
- L. Fang, W. Tao, S. Bo, H. Sen, L. Fang, M. Nan, X. Fu-Jun, W. Peng, Y. Jian-Quan, Chin. Phys. B 2009, 18, 1618.
- (2009) Chin. Phys. B , vol.18 , pp. 1618
- Fang, L.¹ Tao, W.² Bo, S.³ Sen, H.⁴ Fang, L.⁵ Nan, M.⁶ Fu-Jun, X.⁷ Peng, W.⁸ Jian-Quan, Y.⁹

19
- 77949730354
- O. Menard, F. Cayrel, E. Collard, D. Alquier, Phys. Status Solidi C 2010, 7, 112.
- (2010) Phys. Status Solidi C , vol.7 , pp. 112
- Menard, O.¹ Cayrel, F.² Collard, E.³ Alquier, D.⁴

20
- 77957571259
- DOI: 10.1016/j.jallcom.2010.02.194
- P. C. Chang, Y. K. Su, K. J. Lee, C. L. Yu, S. J. Chang, C. H. Liu, J. Alloys Compd. 2010, DOI: 10.1016/j.jallcom.2010.02.194.
- (2010) J. Alloys Compd.
- Chang, P.C.¹ Su, Y.K.² Lee, K.J.³ Yu, C.L.⁴ Chang, S.J.⁵ Liu, C.H.⁶

21
- 77955413914
- Y. Jung, M. A. Mastro, J. Hite, C. R. Eddy, J. Kim, Thin Solid Films 2010, 518, 5810.
- (2010) Thin Solid Films , vol.518 , pp. 5810
- Jung, Y.¹ Mastro, M.A.² Hite, J.³ Eddy, C.R.⁴ Kim, J.⁵

22
- 79751529947
- DOI: 10.1007/s10854-010-0129-4
- I. Jyothi, V. Rajagopal Reddy, C-J. Choi, J. Mater. Sci: Mater Electron. 2010, DOI: 10.1007/s10854-010-0129-4.
- (2010) J. Mater. Sci: Mater Electron.
- Jyothi, I.¹ Rajagopal Reddy, V.² Choi, C.-J.³

23
- 0004005306
- (2nd edn), John Wiley & Sons: New York
- S. M. Sze, Physics of Semiconductor Devices, (2nd edn), John Wiley & Sons: New York, 1981.
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

24
- 0029368756
- M. Dreshsler, D. M. Hofmann, B. K. Meyer, T. Detchprohm, I. Akasaki, Jpn. J. Appl. Phys. 1995, 34, L1178.
- (1995) Jpn. J. Appl. Phys. , vol.34
- Dreshsler, M.¹ Hofmann, D.M.² Meyer, B.K.³ Detchprohm, T.⁴ Akasaki, I.⁵

25
- 0003546026
- (2nd edn), Clarendon: Oxford
- E. H. Rhoderick, T. H. Williams, in Metal Semiconductor Contacts, (2nd edn), Clarendon: Oxford, 1988.
- (1988) Metal Semiconductor Contacts
- Rhoderick, E.H.¹ Williams, T.H.²

26
- 0032208753
- X. J. Wang, L. He, J. Electron. Mater. 1998, 27, 1272.
- (1998) J. Electron. Mater. , vol.27 , pp. 1272
- Wang, X.J.¹ He, L.²

27
- 0343982041
- S. K. Cheung, N. W. Cheung, Appl. Phys. Lett. 1993, 49, 85.
- (1993) Appl. Phys. Lett. , vol.49 , pp. 85
- Cheung, S.K.¹ Cheung, N.W.²

28
- 80051652078
- D. T. Quan, H. Hbib, Solid-State Electron. 1993, 36, 85.
- (1993) Solid-State Electron. , vol.36 , pp. 85
- Quan, D.T.¹ Hbib, H.²

29
- 20644450495
- H. Norde, J. Appl. Phys. 1979, 50, 5052.
- (1979) J. Appl. Phys. , vol.50 , pp. 5052
- Norde, H.¹

30
- 0037152698
- Y. Sun, X. M. Schen, J. Wang, D. G. Zhao, G. Feng, Y. Fu, S. M. Zhang, Z. H. Zhang, F. H. Feng, Y. X. Bai, H. Yang, J. Phys. D: Appl. Phys. 2002, 35, 2648.
- (2002) J. Phys. D: Appl. Phys. , vol.35 , pp. 2648
- Sun, Y.¹ Schen, X.M.² Wang, J.³ Zhao, D.G.⁴ Feng, G.⁵ Fu, Y.⁶ Zhang, S.M.⁷ Zhang, Z.H.⁸ Feng, F.H.⁹ Bai, Y.X.¹⁰ Yang, H.¹¹

31
- 0004071496
- Wiley: New York
- D. K. Schroder, Semiconductor Material and Device Characterization, Wiley: New York, 1990.
- (1990) Semiconductor Material and Device Characterization
- Schroder, D.K.¹

32
- 0003476553
- Plenum Press: New York
- M. S. Tyagi, Metal Semiconductor Schottky Barrier Junctions and Their Applications, Plenum Press: New York, 1994.
- (1994) Metal Semiconductor Schottky Barrier Junctions and Their Applications
- Tyagi, M.S.¹

33
- 0001056859
- W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, P. Chye, Phys. Rev. Lett. 1980, 44, 420.
- (1980) Phys. Rev. Lett. , vol.44 , pp. 420
- Spicer, W.E.¹ Lindau, I.² Skeath, P.³ Su, C.Y.⁴ Chye, P.⁵

34
- 77955306819
- R. H. Williams, V. Montgomery, R. R. Varma, J. Phys. C 1978, 44, L735.
- (1978) J. Phys. C , vol.44
- Williams, R.H.¹ Montgomery, V.² Varma, R.R.³

35
- 0038342110
- J. Wang, D. G. Zhao, Y. P. Sun, L. H. Duan, Y. T. Wang, S. M. Zhang, H. Yang, S. Zhou, M. Wu, J. Phys. D Appl. Phys. 2003, 36, 1018.
- (2003) J. Phys. D Appl. Phys. , vol.36 , pp. 1018
- Wang, J.¹ Zhao, D.G.² Sun, Y.P.³ Duan, L.H.⁴ Wang, Y.T.⁵ Zhang, S.M.⁶ Yang, H.⁷ Zhou, S.⁸ Wu, M.⁹

36
- 58849121742
- P. Koteswara Rao, V. Rajagopal Reddy, Mater. Chem. Phys. 2009, 114, 821.
- (2009) Mater. Chem. Phys. , vol.114 , pp. 821
- Koteswara Rao, P.¹ Rajagopal Reddy, V.²

37
- 0001204411
- J. Sun, K. A. Rickert, J. M. Redwing, A. B. Ellis, F. J. Himpsel, T. F. Kuech, Appl. Phys. Lett. 2000, 76, 415.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 415
- Sun, J.¹ Rickert, K.A.² Redwing, J.M.³ Ellis, A.B.⁴ Himpsel, F.J.⁵ Kuech, T.F.⁶

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