Effects of thermal annealing on the electrical and structural properties of Pt/Mo Schottky contacts on n-type GaN

Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 10, 2009, Pages 1018-1025

  Reddy, Varra Rajagopal ^a   Ravinandan, M ^b   Koteswara Rao, P ^a   Choi, Chel Jong ^c  

^a SRI VENKATESWARA UNIVERSITY   (India)

^b UNIVERSITY OF MYSORE   (India)

^c Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CORE-LEVEL SHIFT; CURRENT VOLTAGE; ELECTRICAL AND STRUCTURAL PROPERTIES; ELEVATED TEMPERATURE; HIGH TEMPERATURE DEVICE; LOW ENERGIES; RMS ROUGHNESS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; THERMAL DEGRADATIONS; THERMAL-ANNEALING; XPS; XRD STUDIES;

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH TEMPERATURE APPLICATIONS; PHASE INTERFACES; PHOTODEGRADATION; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 69249240320     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9824-9     Document Type: Article

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