Electrical and structural properties of rapidly annealed Pd/Mo Schottky contacts on n-type GaN

Semiconductor Science and Technology

Volumn 23, Issue 9, 2008, Pages

  Rajagopal Reddy, V ^a   Ravinandan, M ^a   Koteswara Rao, P ^a   Choi, Chel Jong ^b  

^a SRI VENKATESWARA UNIVERSITY   (India)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGERS; DIFFRACTION; ELECTRON SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; PHASE INTERFACES; PHOTODEGRADATION; SCHOTTKY BARRIER DIODES; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING GALLIUM; SULFATE MINERALS; X RAY ANALYSIS; X RAY DIFFRACTION;

ANNEALING TEMPERATURE; AS-DEPOSITED; AUGER ELECTRON SPECTROSCOPY (AES); AUGER ELECTRONS; BARRIER HEIGHT; CAPACITANCE-VOLTAGE; CURRENT-VOLTAGE; DEVICE APPLICATIONS; ELECTRICAL AND STRUCTURAL PROPERTIES; ELEVATED TEMPERATURES; HIGH TEMPERATURES; RMS ROUGHNESS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; X-RAY DIFFRACTION STUDIES;

AUGER ELECTRON SPECTROSCOPY;

EID: 51849156820     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/9/095026     Document Type: Article

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