Rhodium-based Schottky contacts on n-doped gallium nitride

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1953-1955

  Tian, F ^a   Chor, E F ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CO-EXISTENCE; ELECTRICAL CHARACTERISTIC; GAN SUBSTRATE; INTERFACIAL DEFECT; MORPHOLOGICAL STABILITY; N-DOPED; ORDER OF MAGNITUDE; REVERSE LEAKAGE CURRENT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; THERMAL STABILITY; THERMAL STABILITY STUDIES; THIN LAYERS;

GALLIUM NITRIDE; RHODIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; THERMODYNAMIC STABILITY; THERMOGRAVIMETRIC ANALYSIS;

GALLIUM ALLOYS;

EID: 77951235531     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778527     Document Type: Conference Paper

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