Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN

Thin Solid Films

Volumn 518, Issue 20, 2010, Pages 5810-5812

  Jung, Younghun ^a   Mastro, Michael A ^b   Hite, Jennifer ^b   Eddy Jr , Charles R ^b   Kim, Jihyun ^a  

^a Korea University   (South Korea)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Annealing; Non polar GaN; Schottky barrier height

Indexed keywords

A-PLANE; A-PLANE GAN; ANNEAL TEMPERATURES; ANNEALING TEMPERATURES; GALLIDES; IDEALITY FACTORS; IN-SITU; IN-SITU MEASUREMENT; NON-POLAR; NON-POLAR GAN; PLANE SAPPHIRE; POST ANNEALING; POST-ANNEAL; POST-ANNEALING TEMPERATURE; SCHOTTKY BARRIER HEIGHT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DEVICES;

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM ALLOYS; GALLIUM NITRIDE; SCHOTTKY BARRIER DIODES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 77955413914     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.05.113     Document Type: Conference Paper

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