Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Chinese Physics B

Volumn 18, Issue 4, 2009, Pages 1618-1621

  Fang, Liu ^a   Tao, Wang ^a   Bo, Shen ^b   Sen, Huang ^b   Fang, Lin ^b   Nan, Ma ^b   Fu Jun, Xu ^b   Peng, Wang ^a   Jian Quan, Yao ^a  

^a TIANJIN UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

Barrier height; Ideality factor; Schottky contact; Thermal annealing

Indexed keywords

ANNEALING CONDITION; BARRIER HEIGHT; BARRIER HEIGHTS; CONTACT PARAMETERS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRON SATURATION VELOCITY; FOUR-ORDER; GAN EPILAYERS; GATE-LEAKAGE CURRENT; HIGH BREAKDOWN FIELDS; HIGH QUALITY; I-V CHARACTERISTIC CURVE; IDEALITY FACTOR; KEY ISSUES; NONLINEAR FITTING; REVERSE-BIAS; SCHOTTKY; SCHOTTKY CONTACT; SCHOTTKY CONTACTS; THERMAL ANNEALING;

ANNEALING; CURVE FITTING; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; MOS CAPACITORS; SEMICONDUCTING GALLIUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67650766734     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/4/055     Document Type: Article

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