Effect of annealing temperature on electrical and structural properties of transparent indium tin oxide electrode to n-type GaN

Materials Chemistry and Physics

Volumn 114, Issue 2-3, 2009, Pages 821-826

  Koteswara Rao, P ^a   Rajagopal Reddy, V ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

Auger electron microscopy; Electrical and structural properties; Schottky contacts; X ray diffraction

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; AUGERS; DIFFRACTION; ELECTRIC PROPERTIES; ELECTRODEPOSITION; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; INDIUM; NITRIDES; PHASE INTERFACES; PHOTOLITHOGRAPHY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SURFACE MORPHOLOGY; TIN; TITANIUM COMPOUNDS; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; ATOMIC FORCES; AUGER ELECTRON MICROSCOPY; BARRIER HEIGHTS; ELECTRICAL AND STRUCTURAL PROPERTIES; ELECTRICAL PROPERTIES; INDIUM TIN OXIDE ELECTRODES; INDIUM TIN OXIDES; ITO CONTACTS; ITO FILMS; NITROGEN AMBIENT; RMS ROUGHNESS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; THERMAL-ANNEALING;

STRUCTURAL PROPERTIES;

EID: 58849121742     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2008.10.054     Document Type: Article

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