Investigation of the effects of porous layer on the electrical properties of Pt/n-GaN Schottky contacts

Physica B: Condensed Matter

Volumn 403, Issue 18, 2008, Pages 3105-3109

  Yam, F K ^a   Hassan, Z ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Electroless etching; Porous GaN; Schottky barrier height

Indexed keywords

ELECTRIC PROPERTIES; ELECTROLESS PLATING; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR METAL BOUNDARIES;

ADDITIONAL SAMPLES; AS-GROWN SAMPLE; COMPARATIVE STUDIES; CURRENT-VOLTAGE (C-V) MEASUREMENTS; ELECTRICAL (ELECTRONIC) PROPERTIES; ELECTRICAL CHARACTERISTICS; ELECTROLESS CHEMICAL ETCHING; POROUS LAYERS; ROUGH SURFACES; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SCHOTTKY-BARRIER HEIGHT (SBH); STRUCTURAL STUDIES; UV ILLUMINATIONS; X RAY DIFFRACTION (XRD);

CURRENT VOLTAGE CHARACTERISTICS;

EID: 48749102901     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.03.014     Document Type: Article

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