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Journal of Materials Science: Materials in Electronics

Volumn 22, Issue 3, 2011, Pages 286-291

Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surface

(3) Jyothi, I a Rajagopal Reddy, V a Choi, Chel Jong b

a SRI VENKATESWARA UNIVERSITY (India)

b Chonbuk National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BARRIER HEIGHTS; BEFORE AND AFTER; CURRENT VOLTAGE; EDX ANALYSIS; ELECTRICAL CHARACTERISTIC; ELEVATED TEMPERATURE; GAN LAYERS; INTERFACIAL LAYER; MAXIMUM VALUES; MICRO-STRUCTURAL; MICROSTRUCTURAL PROPERTIES; NATIVE OXIDE LAYER; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY RECTIFIERS; TEM;

ANNEALING; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; SCHOTTKY BARRIER DIODES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRIC RECTIFIERS;

EID: 79751529947 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-010-0129-4 Document Type: Article

Times cited : (6)

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