Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts

Materials Science and Engineering: B

Volumn 137, Issue 1-3, 2007, Pages 200-204

  Reddy, V Rajagopal ^a   Rao, P Koteswara ^a   Ramesh, C K ^a  

^a UNIVERSITY OF MYSORE   (India)

Author keywords

Auger electron microscopy; I V and C V techniques; n GaN; Schottky barrier height; X ray diffraction

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CAPACITANCE; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; GALLIUM NITRIDE; GOLD; X RAY DIFFRACTION;

SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS;

RUTHENIUM;

EID: 33846798026     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.11.018     Document Type: Article

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