Thermal annealing behaviour of Pt on n-GaN Schottky contacts

Journal of Physics D: Applied Physics

Volumn 36, Issue 8, 2003, Pages 1018-1022

  Wang, Jun ^a   Zhao, D G ^a   Sun, Y P ^a   Duan, L H ^a   Wang, Y T ^a   Zhang, S M ^a   Yang, Hui ^a   Zhou, Shengqiang ^b   Wu, Mingfang ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); MORPHOLOGY; PLATINUM; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SURFACES; X RAY DIFFRACTION ANALYSIS;

SCHOTTKY CONTACTS;

GALLIUM NITRIDE;

EID: 0038342110     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/8/312     Document Type: Article

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