Defect-free single-crystal SiGe: A new material from nanomembrane strain engineering

ACS Nano

Volumn 5, Issue 7, 2011, Pages 5814-5822

  Paskiewicz, Deborah M ^a   Tanto, Boy ^a   Savage, Donald E ^a   Lagally, Max G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

epitaxy; heterostructures; SiGe substrate; strained Si

Indexed keywords

CRYSTALLINITIES; DEFECT-FREE; GROUP-IV SEMICONDUCTORS; GROWTH SUBSTRATES; LATTICE-MATCHED; NANOMEMBRANES; SI SUBSTRATES; SI-GE ALLOYS; SIGE LAYERS; SIGE SUBSTRATES; STRAIN ENGINEERING; STRAINED SIGE; STRAINED-SI; STRUCTURAL QUALITIES;

DEFECTS; DIFFRACTIVE OPTICS; EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; FILMS; GERMANIUM; NANOSTRUCTURES; SILICON; SILICON ALLOYS; SINGLE CRYSTALS; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79961037305     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn201547k     Document Type: Conference Paper

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