Quantum confinement, surface roughness, and the conduction band structure of ultrathin silicon membranes

ACS Nano

Volumn 4, Issue 4, 2010, Pages 2466-2474

  Chen, Feng ^a,b   Ramayya, Edwin B ^a   Euaruksakul, Chanan ^a   Himpsel, Franz J ^a   Celler, George K ^c   Ding, Bingjun ^b   Knezevic, Irena ^a   Lagally, Max G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b XI'AN JIAOTONG UNIVERSITY   (China)

^c Soitec USA   (United States)

Author keywords

Quantum confinement; Silicon nanomembrane; Surface roughness; Thermoelectric; Valley splitting

Indexed keywords

BULK VALUE; CONDUCTION-BAND MINIMUM; DEGREE OF CONFINEMENT; DENSITY OF STATE; DIRECT MEASUREMENT; ENERGY SPLITTINGS; NANOMEMBRANES; SI(0 0 1); SI(110); SUB-BANDS; ULTRATHIN SILICON; ULTRATHIN SILICON MEMBRANE; VALLEY SPLITTING; WEIGHTED AVERAGES;

BAND STRUCTURE; ELECTRON MOBILITY; HETEROJUNCTIONS; LANDFORMS; METAL ANALYSIS; NANOSTRUCTURES; QUANTUM CONFINEMENT; SURFACE PROPERTIES; SURFACE ROUGHNESS;

SILICON;

EID: 77951754424     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn100275z     Document Type: Article

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