Measurement of valley splitting in high-symmetry Si/SiGe quantum dots

Applied Physics Letters

Volumn 98, Issue 12, 2011, Pages

  Borselli, M G ^a   Ross, R S ^a   Kiselev, A A ^a   Croke, E T ^a   Holabird, K S ^a   Deelman, P W ^a   Warren, L D ^a   Alvarado Rodriguez, I ^a   Milosavljevic, I ^a   Ku, F C ^a   Wong, W S ^a   Schmitz, A E ^a   Sokolich, M ^a   Gyure, M F ^a   Hunter, A T ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMICALLY SHARP INTERFACE; HETEROSTRUCTURES; LOW MAGNETIC FIELDS; MAGNETOSPECTROSCOPY; QUANTUM DOT; SHELL STRUCTURE; SI-BASED DEVICES; SI/SIGE; SPATIAL SYMMETRY; SPLITTINGS; VALLEY SPLITTING;

MAGNETIC FIELDS; SEMICONDUCTOR QUANTUM DOTS;

LANDFORMS;

EID: 79953857394     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3569717     Document Type: Article

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16. Magnetospectroscopy on devices Si1 and Si2 display first addition slopes of 0.0±0.1 mV/T and 0.07±0.08 mV/T, respectively, from 0 to 1 T.
17. B /α=0.7 mV/T and standard deviation 0.1 mV/T. With α=0.24 eV/V, this results in a g=2.9±0.3.