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Volumn 96, Issue 18, 2010, Pages

Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

(8) Thalakulam, Madhu a Simmons, C B a Rosemeyer, B M a Savage, D E a Lagally, M G a Friesen, Mark a Coppersmith, S N a Eriksson, M A a

a UNIVERSITY OF WISCONSIN MADISON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE SENSING; DOUBLE QUANTUM DOTS; ELECTRON EFFECTIVE MASS; ELECTRON NUMBER; GATE VOLTAGES; HETEROSTRUCTURES; SI/SIGE; SINGLE ELECTRON;

CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTOR QUANTUM DOTS;

ELECTRONS;

EID: 77952793801 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3425892 Document Type: Article

Times cited : (39)

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