Composition and strain in thin Si1-x Gex virtual substrates measured by micro-Raman spectroscopy and x-ray diffraction

Journal of Applied Physics

Volumn 109, Issue 3, 2011, Pages

  Perova, T S ^a   Wasyluk, J ^a   Lyutovich, K ^b   Kasper, E ^b   Oehme, M ^b   Rode, K ^a   Waldron, A ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREE OF RELAXATION; GE CONTENT; INITIAL STAGES; MICRO RAMAN SPECTROSCOPY; NUMBER OF SAMPLES; RECIPROCAL SPACE MAPS; RELAXED SIGE; SIGE VIRTUAL SUBSTRATES; STRAINED-SILICON; STRESS VALUES; THIN SIGE LAYER; ULTRA-THIN; VERY LOW TEMPERATURES; VIBRATIONAL MODES; VIRTUAL SUBSTRATES; XRD;

DIFFRACTION; FIELD EFFECT TRANSISTORS; GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; POINT DEFECTS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON; SILICON ALLOYS; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79951846200     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3536508     Document Type: Article

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