SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 657, Issue , 2001, Pages EE741-EE746

Silicon germanium epitaxy: A new material for MEMS

(5) Borenstein, J T a Gerrish, N D a White, R a Currie, M T a Fitzgerald, E A a

a CHARLES STARK DRAPER LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; CRYSTALLINE MATERIALS; DEFECTS; DOPING (ADDITIVES); ELASTIC MODULI; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; REACTIVE ION ETCHING; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

EPITAXIAL SILICON;

POLYSILICON;

EID: 0035556791 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.