Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

Journal of Applied Physics

Volumn 102, Issue 5, 2007, Pages

  Oh, Hoon Jung ^a   Choi, Kyu Jin ^b   Loh, Wei Yip ^c   Htoo, Thwin ^a   Chua, Soo Jin ^a   Cho, Byung Jin ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Jusung Engineering   (South Korea)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; ELECTRIC INSULATORS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GERMANIUM; LOW TEMPERATURE EFFECTS; MOSFET DEVICES; SILICON;

LOW TEMPERATURE MIGRATION ENHANCED EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34548606495     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2777401     Document Type: Article

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