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Volumn 86, Issue 2, 1999, Pages 845-849

Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatch

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EID: 0001232599     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370813     Document Type: Article
Times cited : (20)

References (23)
  • 7
    • 85034562730 scopus 로고    scopus 로고
    • note
    • The Si(001) substrates (supposedly nominal) that we have used are misorientated towards the (110) directions by at most 0.26° (x-ray diffraction).
  • 10
    • 0027701387 scopus 로고    scopus 로고
    • P. F. Fewster, Semicond. Sci. Technol. 8, 1915 (1993); D. K. Bowen and B. K. Tanner, High Resolution X-ray Diffractometry and Topography (Taylor & Francis, London, 1998).
    • (1993) Semicond. Sci. Technol. , vol.8 , pp. 1915
    • Fewster, P.F.1
  • 17
    • 0000756466 scopus 로고
    • S. Takagi, J. Phys. Soc. Jpn. 26, 1239 (1969); D. Taupin, Bull. Soc. Fr. Mineral. Cristallogr. 87, 469 (1964).
    • (1969) J. Phys. Soc. Jpn. , vol.26 , pp. 1239
    • Takagi, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.