Quantitative model for the MBE-growth of ternary nitrides

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 301-305

  Averbeck, R ^a   Riechert, H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; MOLECULAR BEAM EPITAXY; PYROLYSIS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

GROWTH TEMPERATURE; TERNARY NITRIDES;

SEMICONDUCTOR GROWTH;

EID: 0033221555     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<301::AID-PSSA301>3.0.CO;2-H     Document Type: Article

References (9)

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