Real-time x-ray studies of gallium nitride nanodot formation by droplet heteroepitaxy

Journal of Applied Physics

Volumn 102, Issue 7, 2007, Pages

  Wang, Yiyi ^a   Özcan, Ahmet S ^a,c   Sanborn, Christopher ^a   Ludwig, Karl F ^a   Bhattacharyya, Anirban ^b   Chandrasekaran, Ramya ^b   Moustakas, Theodore D ^b   Zhou, Lin ^d   Smith, David J ^d  

^a Boston University   (United States)

^b Boston University   (United States)

^c IBM MICROELECTRONICS   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

NANODOTS; REAL-TIME GRAZING-INCIDENCE; SAPPHIRE SUBSTRATES; WURTZITES;

DROPS; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PLASMA SOURCES; SAPPHIRE; ULTRAHIGH VACUUM; X RAY ANALYSIS;

GALLIUM NITRIDE;

EID: 35348910182     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2786578     Document Type: Article

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