Droplet heteroepitaxy of GaN quantum dots by metal-organic chemical vapor deposition

Applied Physics Letters

Volumn 85, Issue 12, 2004, Pages 2346-2348

  Gherasimova, M ^a   Cui, G ^a   Jeon, S R ^a   Ren, Z ^a   Martos, D ^a   Han, J ^a   He, Y ^b   Nurmikko, A V ^b  

^a Yale University   (United States)

^b Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROEPITAXY; METALLIC LAYERS; NANOPHOTONICS; SURFACE DENSITIES;

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; SYNTHESIS (CHEMICAL);

GALLIUM NITRIDE;

EID: 7044274244     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1793343     Document Type: Article

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