Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-3

  Hermann, M ^a   Furtmayr, F ^a   Bergmaier, A ^b   Dollinger, G ^b   Stutzmann, M ^a   Eickhoff, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; DOPING (ADDITIVES); GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; X RAY DIFFRACTION ANALYSIS;

DOPING CONCENTRATION; HETEROSTRUCTURE DIODES; LIGHT EMITTERS; MORPHOLOGICAL PROPERTIES;

SILICON;

EID: 20844436445     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1923180     Document Type: Article

References (20)

1. Y. Taniyasu, M. Kasu, and T. Makimoto, Appl. Phys. Lett. 84, 2115 (2004).
2. C. R. Miskys, J. A. Garrido, C. E. Nebel, M. Hermann, O. Ambacher, M. Eickhoff, and M. Stutzmann, Appl. Phys. Lett. 82, 290 (2003).
3. J. Li, K. B. Nam, and H. X. Jiang, Appl. Phys. Lett. 79, 3245 (2001).
4. Y. Taniyasu, M. Kasu, and N. Kobayashi, Appl. Phys. Lett. 81, 1255 (2002).
5. Y. Taniyasu, M. Kasu, and T. Makimoto, Appl. Phys. Lett. 85, 4672 (2004).
6. M. L. Nakarmi, K. H. Kim, K. Zhu, and H. X. Jiang, Appl. Phys. Lett. 85, 3769 (2004).
7. R. Zeisel, M. W. Bayerl, S. T. B. Goennenwein, R. Dimitrov, O. Ambacher, M. S. Brandt, and M. Stutzmann, Phys. Rev. B 61, R16283 (2000).
8. C. Stampfl, J. Neugebauer, and C. G. Van de Walle, Mater. Sci. Eng., B 59, 253 (1999).
9. P. Boguslawski and J. Bernholc, Phys. Rev. B 56, 9496 (1997).
10. D. W. Jenkins and J. D. Dow, Phys. Rev. B 39, 3317 (1989).
11. N. Nepal, K. B. Nam, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, J. M. Zavada, and R. G. Wilson, Appl. Phys. Lett. 84, 1090 (2004).
12. C. H. Park and D. J. Chadi, Phys. Rev. B 55, 12995 (1997).
13. C. G. Van de Walle, C. Stampfl, J. Neugebauer, M. D. McCluskey, and N. M. Johnson, MRS Internet J. Nitride Semicond. Res. 4S1, G10.4 (1999).
14. C. G. Van de Walle, Phys. Rev. B 57, R2033 (1998).
15. G. Dollinger, C. M. Frey, A. Bergmaier, and T. Faestermann, Europhys. Lett. 42, 19 (1998).
16. S. T. Bradley, S. H. Goss, L. J. Brillson, J. Hwang, and W. J. Schaff, J. Vac. Sci. Technol. B 21, 2558 (2003).
17. M. Kasu, Y. Taniyasu, and N. Kobayashi, Jpn. J. Appl. Phys., Part 2 40, L1048 (2001).
18. A. Fara, F. Bernardini, and V. Fiorentini, J. Appl. Phys. 85, 2001 (1999).
19. C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 74, 3833 (1999).
20. N. F. Mott, Can. J. Phys. 34, 1356 (1956).