The relation of active nitrogen species to high-temperature limitations for (0001) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 74, Issue 25, 1999, Pages 3836-3838

  Ptak, A J ^a   Millecchia, M R ^a   Myers, T H ^a   Ziemer, K S ^b   Stinespring, C D ^b  

^a WEST VIRGINIA UNIVERSITY   (United States)

^b West Virginia University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN; PLASMA APPLICATIONS; PYROLYSIS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032613886     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124196     Document Type: Article

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