Realising epitaxial growth of GaN on (001) diamond

Journal of Applied Physics

Volumn 110, Issue 1, 2011, Pages

  Van Dreumel, G W G ^a   Tinnemans, P T ^a   Van Den Heuvel, A A J ^a   Bohnen, T ^a   Buijnsters, J G ^a,b   Ter Meulen, J J ^a   Van Enckevort, W J P ^a   Hageman, P R ^a   Vlieg, E ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION PROCESS; DIAMOND SUBSTRATES; EPITAXIAL RELATIONSHIPS; GROWTH PARAMETERS; GROWTH PROCESS; HIGHEST TEMPERATURE; POLE FIGURE ANALYSIS; PRECURSOR MATERIALS; TWO DOMAINS; V/III RATIO; WURTZITE GAN;

DEPOSITION; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SINGLE CRYSTALS; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

DIAMONDS;

EID: 79960552603     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3601351     Document Type: Article

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