GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy

Journal of Crystal Growth

Volumn 311, Issue 21, 2009, Pages 4539-4542

  Dussaigne, A ^a   Malinverni, M ^a   Martin, D ^a   Castiglia, A ^a   Grandjean, N ^a  

^a EPFL   (Switzerland)

Author keywords

A3. Molecular beam epitaxy; B1. Diamond; B1. Nitrides; B3. High power electronics

Indexed keywords

A3. MOLECULAR BEAM EPITAXY; B1. DIAMOND; B1. NITRIDES; B3. HIGH POWER ELECTRONICS; BAND EDGE; GAN EPILAYERS; HIGH POWER ELECTRONIC APPLICATIONS; IN-SITU; PHOTOLUMINESCENCE MEASUREMENTS; RMS ROUGHNESS; SINGLE CRYSTAL DIAMOND; WURTZITE GAN;

CRYSTAL GROWTH; DIAMONDS; GALLIUM NITRIDE; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PROPERTIES; POWER ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SINGLE CRYSTALS; SUBSTRATES; TWO DIMENSIONAL; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 70349762602     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.08.018     Document Type: Article

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