Formation and characterization of 4-inch GaN-on-diamond substrates

Diamond and Related Materials

Volumn 19, Issue 2-3, 2010, Pages 229-233

  Francis, D ^a   Faili, F ^a   Babic D ^a   Ejeckam, F ^a   Nurmikko, A ^b   Maris, H ^b  

^a Group4 Labs Inc   (United States)

^b BROWN UNIVERSITY   (United States)

Author keywords

CVD diamond; Gallium nitride; Gan on diamond wafers; Wafer bow

Indexed keywords

100 GHZ; ACTIVE REGIONS; ADHESION LAYER; CRITICAL LAYER; CVD DIAMOND; DIAMOND STRUCTURES; DIAMOND SUBSTRATES; DIAMOND WAFERS; ELECTRONICS MANUFACTURING; HIGH THERMAL CONDUCTIVITY; HIGH-POWER; INTERFACIAL BONDING; MICROWAVE POWER; NON-TRIVIAL; PICOSECOND ULTRASONIC MEASUREMENTS; SCALE-UP; TRANSITION FREQUENCIES; WAFER BOW;

ADHESION; AMPLIFICATION; CHEMICAL VAPOR DEPOSITION; DIAMONDS; EXTRATERRESTRIAL ATMOSPHERES; GALLIUM NITRIDE; HIGH FREQUENCY AMPLIFIERS; SUBSTRATES; ULTRASONIC TESTING; WAFER BONDING;

GALLIUM ALLOYS;

EID: 74849112681     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.08.017     Document Type: Article

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