Growth of AlN and GaN thin films on Si(100) using new single molecular precursors by MOCVD method

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 711-717

  Boo, J H ^a   Lee, S B ^a   Kim, Y S ^b   Park, J T ^b   Yu, K S ^c   Kim, Y ^c  

^a Sungkyunkwan University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Korea Research Institute of Chemical Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; STOICHIOMETRY; SUBSTRATES; SYNTHESIS (CHEMICAL); THERMOGRAVIMETRIC ANALYSIS; THIN FILMS;

SINGLE MOLECULAR PRECURSORS;

SEMICONDUCTING FILMS;

EID: 0033221650     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<711::AID-PSSA711>3.0.CO;2-Y     Document Type: Article

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